Global GaN-on-Si Diode Market Growth 2024-2030

Report ID: 2893113 | Published Date: Feb 2026 | No. of Page: 120 | Base Year: 2025 | Rating: 4.8 | Webstory: Check our Web story

Impact of U.S Tarrifs Analyzed 2025

The global GaN-on-Si Diode market size is projected to grow from US$ million in 2024 to US$ million in 2030; it is expected to grow at a CAGR of % from 2024 to 2030.

ReportPrime's newest research report, the “GaN-on-Si Diode Industry Forecast” looks at past sales and reviews total world GaN-on-Si Diode sales in 2023, providing a comprehensive analysis by region and market sector of projected GaN-on-Si Diode sales for 2024 through 2030. With GaN-on-Si Diode sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN-on-Si Diode industry.

This Insight Report provides a comprehensive analysis of the global GaN-on-Si Diode landscape and highlights key trends related to:

  • Product segmentation
  • Company formation
  • Revenue and market share
  • Latest development and M&A activity

This report also analyzes the strategies of leading global companies with a focus on:

  • GaN-on-Si Diode portfolios and capabilities
  • Market entry strategies
  • Market positions
  • Geographic footprints

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN-on-Si Diode and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN-on-Si Diode.

Market Estimations:

  1. United States market for GaN-on-Si Diode is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.
  2. China market for GaN-on-Si Diode is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.
  3. Europe market for GaN-on-Si Diode is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.

Global key GaN-on-Si Diode players cover:

  • Siltronic
  • GaN System
  • Microchip Technology (Microsemis)
  • Texas Instruments
  • Infineon

This report presents a comprehensive overview, market shares, and growth opportunities of GaN-on-Si Diode market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:

  • N-Type Contact
  • P-Type Contact

Segmentation by Application:

  • Consumer Electronics
  • Automobile
  • 5G
  • Other

This report also splits the market by region:

  • Americas
    • United States
    • Canada
    • Mexico
    • Brazil
  • APAC
    • China
    • Japan
    • Korea
    • Southeast Asia
    • India
    • Australia
  • Europe
    • Germany
    • France
    • UK
    • Italy
    • Russia
  • Middle East & Africa
    • Egypt
    • South Africa
    • Israel
    • Turkey
    • GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration:

  • Siltronic
  • GaN System
  • Microchip Technology (Microsemis)
  • Texas Instruments
  • Infineon
  • MACOM
  • STMicroelectronics
  • Qorvo
  • Ganhemt
  • Shenzhen SlkorMicro
  • Metasemis

Key Questions Addressed in this Report:

  • What is the 10-year outlook for the global GaN-on-Si Diode market?
  • What factors are driving GaN-on-Si Diode market growth, globally and by region?
  • Which technologies are poised for the fastest growth by market and region?
  • How do GaN-on-Si Diode market opportunities vary by end market size?
  • How does GaN-on-Si Diode break out by Type, by Application?
Frequently Asked Questions
GaN-on-Si Diode report offers great insights of the market and consumer data and their interpretation through various figures and graphs. Report has embedded global market and regional market deep analysis through various research methodologies. The report also offers great competitor analysis of the industries and highlights the key aspect of their business like success stories, market development and growth rate.
GaN-on-Si Diode report is categorised based on following features:
  1. Global Market Players
  2. Geopolitical regions
  3. Consumer Insights
  4. Technological advancement
  5. Historic and Future Analysis of the Market
GaN-on-Si Diode report is designed on the six basic aspects of analysing the market, which covers the SWOT and SWAR analysis like strength, weakness, opportunity, threat, aspirations and results. This methodology helps investors to reach on to the desired and correct decision to put their capital into the market.

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