Global GaN-on-Si Diode Market Growth 2024-2030
The global GaN-on-Si Diode market size is projected to grow from US$ million in 2024 to US$ million in 2030; it is expected to grow at a CAGR of % from 2024 to 2030.
ReportPrime's newest research report, the “GaN-on-Si Diode Industry Forecast” looks at past sales and reviews total world GaN-on-Si Diode sales in 2023, providing a comprehensive analysis by region and market sector of projected GaN-on-Si Diode sales for 2024 through 2030. With GaN-on-Si Diode sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN-on-Si Diode industry.
This Insight Report provides a comprehensive analysis of the global GaN-on-Si Diode landscape and highlights key trends related to:
- Product segmentation
- Company formation
- Revenue and market share
- Latest development and M&A activity
This report also analyzes the strategies of leading global companies with a focus on:
- GaN-on-Si Diode portfolios and capabilities
- Market entry strategies
- Market positions
- Geographic footprints
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN-on-Si Diode and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN-on-Si Diode.
Market Estimations:
- United States market for GaN-on-Si Diode is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.
- China market for GaN-on-Si Diode is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.
- Europe market for GaN-on-Si Diode is estimated to increase from US$ million in 2023 to US$ million by 2030, at a CAGR of % from 2024 through 2030.
Global key GaN-on-Si Diode players cover:
- Siltronic
- GaN System
- Microchip Technology (Microsemis)
- Texas Instruments
- Infineon
This report presents a comprehensive overview, market shares, and growth opportunities of GaN-on-Si Diode market by product type, application, key manufacturers and key regions and countries.
Segmentation by Type:
- N-Type Contact
- P-Type Contact
Segmentation by Application:
- Consumer Electronics
- Automobile
- 5G
- Other
This report also splits the market by region:
- Americas
- United States
- Canada
- Mexico
- Brazil
- APAC
- China
- Japan
- Korea
- Southeast Asia
- India
- Australia
- Europe
- Germany
- France
- UK
- Italy
- Russia
- Middle East & Africa
- Egypt
- South Africa
- Israel
- Turkey
- GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration:
- Siltronic
- GaN System
- Microchip Technology (Microsemis)
- Texas Instruments
- Infineon
- MACOM
- STMicroelectronics
- Qorvo
- Ganhemt
- Shenzhen SlkorMicro
- Metasemis
Key Questions Addressed in this Report:
- What is the 10-year outlook for the global GaN-on-Si Diode market?
- What factors are driving GaN-on-Si Diode market growth, globally and by region?
- Which technologies are poised for the fastest growth by market and region?
- How do GaN-on-Si Diode market opportunities vary by end market size?
- How does GaN-on-Si Diode break out by Type, by Application?
Frequently Asked Questions
- Global Market Players
- Geopolitical regions
- Consumer Insights
- Technological advancement
- Historic and Future Analysis of the Market